During the 2017 Symposia on VLSI Technology and Circuits, imec announced the world’s first demonstration of a vertically stacked ferroelectric Al doped HfO2 device for NAND applications.   Using a new material and a novel architecture, imec has created a non-volatile memory concept with attractive characteristics for power consumption, switching speed, scalability and retention. The achievement shows that ferro-electric memory is a promising technology at various points in the memory hierarchy...